Method and Apparatus for Material Deposition

ABSTRACT

Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

CLAIM OF PRIORITY

This application is a divisional application of U.S. patent applicationSer. No. 12/044,537, filed on Mar. 7, 2008, which is a divisionalapplication of U.S. patent application Ser. No. 10/735,216, filed onDec. 12, 2003, now U.S. Pat. No. 7,358,186. The disclosure of eachabove-identified application is incorporated in its entirety herein byreference.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is related to U.S. patent application Ser. No.10/734,704, filed on Dec. 12, 2003, now U.S. Pat. No. 7,368,017, thedisclosure of which is incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor fabrication.More specifically, the present invention relates to material depositionon a semiconductor wafer.

2. Description of the Related Art

In the fabrication of semiconductor devices such as integrated circuits,memory cells, and the like, a series of manufacturing operations areperformed to define features on semiconductor wafers. The semiconductorwafers include integrated circuit devices in the form of multi-levelstructures defined on a silicon substrate. At a substrate level,transistor devices with diffusion regions are formed. In subsequentlevels, interconnect metallization lines are patterned and electricallyconnected to the transistor devices to define a desired integratedcircuit device. Also, patterned conductive layers are insulated fromother conductive layers by dielectric materials.

The series of manufacturing operations for defining features on thesemiconductor wafers can include many processes such as adding,patterning, etching, removing, and polishing, among others, variousmaterial layers. Due to the intricate nature of the features defined onthe semiconductor wafers, it is necessary to perform each process in aprecise manner. For example, it is often desirable to deposit a materialon a surface of the wafer such that the material conforms uniformly to atopography of the surface of the wafer.

FIG. 1A is an illustration showing a cross-section view of the wafersurface following a non-uniform material deposition, in accordance withthe prior art. The wafer surface is defined to have features 101 and 102which form a topography across the wafer surface. The topography ischaracterized by surfaces that are substantially parallel to the waferand surfaces that are substantially perpendicular to the wafer.Additionally, some features (e.g., feature 102) may be skewed such thattheir surfaces are neither parallel nor perpendicular to the wafer.

Prior art methods of material deposition using physical vapor depositiontechniques tend to deposit greater amounts of material on featuresurfaces having greater exposure to a material source region 111 fromwhich the material is deposited. In general, the material source region111 is represented by the region above the wafer. Therefore, sincefeature surfaces that are substantially parallel to the wafer havegreater exposure to the material source region 111, these featuresurfaces tend to accumulate greater amounts of deposited material. Forexample, with respect to FIG. 1A, a thickness 107 of a depositedmaterial 103 is larger than a thickness 105, wherein the thicknesses 107and 105 are deposited on feature surfaces that are substantiallyparallel and perpendicular, respectively, to the wafer. Additionally, insome instances the non-uniformities in material deposition can besignificant enough to cause discontinuities in the material beingdeposited. For example, a discontinuity 109 is shown at a locationunderlying an overhang of the skewed feature 102. In certainapplications, it is more desirable to have a uniform thickness of thematerial deposited over each feature surface regardless of the featuresurface orientation. Also, it is generally not acceptable to havediscontinuities present in a deposited material layer. Thus, non-uniformmaterial deposition caused by variations in surface exposure to thematerial source region 111 can be problematic.

FIGS. 1B-1 through 1B-4 are illustrations showing a material depositionsequence leading to void formation, in accordance with the prior art.FIG. 1B-1 shows a wafer surface having features 101 prior to depositionof the material 103. The features 101 define a topography of the wafersurface. In some instances, the features may represent high-aspect ratiofeatures wherein the ratio of the feature's vertical dimension to itslateral dimension is greater than 2 or 3 to 1.

FIG. 1B-2 shows a beginning stage of a material deposition processintended to fill a space between the adjacent features 101 with thematerial 103. As previously discussed with respect to FIG. 1A, prior artmaterial deposition methods tend to result in deposited material layershaving non-uniform thicknesses. The thickness 107 of the depositedmaterial 103 is larger than the thickness 105, wherein the thicknesses107 and 105 are deposited on feature 101 surfaces that are substantiallyparallel and perpendicular, respectively, to the wafer.

FIG. 1B-3 shows a later stage of the material deposition processintended to fill the space between the adjacent features 101 with thematerial 103. Due to the non-uniform material deposition, the feature101 surfaces that are substantially parallel to the wafer haveaccumulated a greater thickness of the material 103 than the surfacesthat are substantially perpendicular to the wafer. Furthermore, as thelateral deposition continues and the lateral distance diminishes, itbecomes more difficult for reactants to reach the lower region andfurther reduces the deposition rate in these regions.

FIG. 1B-4 shows the final result of the material deposition processintended to fill the space between the adjacent features 101 with thematerial 103. Due to the non-uniform material deposition, the depositedmaterial on each of the substantially parallel feature 101 surfacesultimately reaches a thickness at which a bridge is formed betweenadjacent features. The bridge results in formation of a void, orkeyhole, 113 within the space between the adjacent features 101. Thus,non-uniformities in material deposition can lead to unsatisfactorymaterial deposition results.

In view of the foregoing, there is a need for an apparatus and a methodto uniformly deposit a material over a wafer surface.

SUMMARY OF THE INVENTION

Broadly speaking, a method and an apparatus are provided for depositinga material on a semiconductor wafer (“wafer”). More specifically, thepresent invention provides a method and apparatus for selectivelyheating a material present on a surface of the wafer exposed to anelectroless plating solution. The selective heating is provided byapplying radiant energy to the wafer surface. The radiant energy isdefined to have a wavelength range that will preferentially heat thematerial present on the wafer surface relative to other surroundingmaterials. The radiant energy can be adjusted during the plating processto optimally follow changing conditions of the material present on thewafer surface. The selective heating of the wafer surface causes atemperature increase at an interface between the wafer surface and theelectroless plating solution. As a result of the heating operation, thetemperature increase at the interface causes a plating reaction to occurat the wafer surface. Thus, material is deposited on the wafer surfacethrough an electroless plating reaction that is initiated and controlledby varying the temperature of the wafer surface using an appropriatelydefined radiant energy source.

In one embodiment, a method for depositing a material on a surface of awafer is disclosed. The method includes applying an electroless platingsolution to the surface of the wafer. The electroless plating solutionis maintained at a temperature at which a plating reaction will notoccur. The method also includes exposing the surface of the wafer toradiant energy that is capable of increasing a temperature of thesurface of the wafer to a state at which the plating reaction willoccur, wherein the plating reaction occurs at an interface between thesurface of the wafer and the electroless plating solution.

In another embodiment, an apparatus for depositing a material on asurface of a wafer is disclosed. The apparatus includes a tank definedby an enclosing wall and a bottom. The tank is configured to contain anelectroless plating solution. Also, a wafer support structure isdisposed within the tank. The wafer support structure is configured tosupport a wafer at a submerged position within the electroless platingsolution to be contained within the tank. The apparatus further includesa radiant energy source disposed above the wafer support structure. Theradiant energy source is oriented to direct radiant energy toward thewafer to be supported at the submerged position within the electrolessplating solution.

In another embodiment, another apparatus for depositing a material on asurface of a wafer is disclosed. The apparatus includes a vessel definedby a top, a bottom, and an enclosing wall. The vessel is configured tocontain an electroless plating solution. Also, a wafer support structureis disposed within the vessel. The wafer support structure is configuredto support a wafer at a position within the vessel. The apparatusfurther includes a radiant energy source disposed above the wafersupport structure. The radiant energy source is oriented to directradiant energy toward the wafer to be supported within the vessel.

In another embodiment, another apparatus for depositing a material on asurface of a wafer is disclosed. The apparatus includes a tank definedby an enclosing wall and a bottom. The tank is configured to contain anelectroless plating solution. The apparatus also includes a wafer holderconfigured to dip a wafer into and remove the wafer from the electrolessplating solution to be contained within the tank. Additionally, aradiant energy source is disposed above the electroless plating solutionto be contained within the tank. The radiant energy source is orientedto direct radiant energy toward the wafer upon removal of the wafer fromthe electroless plating solution.

In another embodiment, another apparatus for depositing a material on asurface of a wafer is disclosed. The apparatus includes a tank definedby an enclosing wall and a bottom. The tank is configured to contain anelectroless plating solution. The apparatus also includes a wafer holderconfigured to rotate a portion of the wafer through the electrolessplating solution to be contained within the tank. Additionally, aradiant energy source is disposed above the electroless plating solutionto be contained within the tank. The radiant energy source is orientedto direct radiant energy toward the portion of the wafer upon rotationout of the electroless plating solution.

In another embodiment, another apparatus for depositing a material on asurface of a wafer is disclosed. The apparatus includes a tank definedby an enclosing wall and a bottom. The tank is configured to contain anelectroless plating solution. Also, a wafer support structure isdisposed within the tank. The wafer support structure is configured tosupport a wafer at a submerged position within the electroless platingsolution to be contained within the tank. The apparatus further includesa radiant energy source disposed within the wafer support structure. Theradiant energy source is oriented to direct radiant energy toward abottom surface of the wafer to be supported at the submerged positionwithin the electroless plating solution. The radiant energy is capableof traversing through the wafer to heat a material present on a topsurface of the wafer.

In another embodiment, a method is disclosed for depositing a materialon a surface of a wafer. The method includes submerging a portion of awafer in a bath of an electroless plating solution. The portion of thewafer is then removed from the bath of the electroless plating solution,such that a meniscus of the electroless plating solution is retained onthe portion of the wafer upon its removal from the bath of theelectroless plating solution. The method also includes exposing theportion of the wafer, having the meniscus of the electroless platingsolution retained thereon, to radiant energy upon removal of the portionof the wafer from the bath of electroless plating solution. The methodfurther includes controlling a wavelength range of the radiant energy tocause the radiant energy to selectively heat a first material present ona surface of the portion of the wafer in exposure to the meniscus of theelectroless plating solution, so as to increase a temperature of thefirst material to a state at which a plating reaction occurs on thefirst material.

Other aspects and advantages of the invention will become more apparentfrom the following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the presentinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention, together with further advantages thereof, may best beunderstood by reference to the following description taken inconjunction with the accompanying drawings in which:

FIG. 1A is an illustration showing a cross-section view of the wafersurface following a non-uniform material deposition, in accordance withthe prior art;

FIGS. 1B-1 through 1B-4 are illustrations showing a material depositionsequence leading to void formation, in accordance with the prior art;

FIG. 2A is an illustration showing an apparatus for depositing amaterial on a surface of a wafer, in accordance with one embodiment ofthe present invention;

FIG. 2B is an illustration showing a variation of the apparatus of FIG.2A, in accordance with one embodiment of the present invention;

FIG. 3 is an illustration showing a variation of the apparatus of FIG.2A, in accordance with one embodiment of the present invention;

FIG. 4 is an illustration showing another variation of the apparatus ofFIG. 2A, in accordance with one embodiment of the present invention;

FIG. 5 is an illustration showing a variation of the apparatus of FIG.4, in accordance with one embodiment of the present invention;

FIG. 6 is an illustration showing an apparatus for depositing materialon the surface of the wafer which combines the collimated radiant energysource of FIG. 3 with the vessel of FIG. 4, in accordance with oneembodiment of the present invention;

FIG. 7 is an illustration showing an apparatus for depositing materialon the surface of the wafer which combines the collimated radiant energysource of FIG. 3 with the vessel of FIG. 5, in accordance with oneembodiment of the present invention;

FIG. 8 is an illustration showing an apparatus for depositing materialon the surface of the wafer, in accordance with one embodiment of thepresent invention;

FIG. 9 is an illustration showing an apparatus for depositing materialon the surface of the wafer, in accordance with one embodiment of thepresent invention;

FIG. 10A is an illustration showing a flowchart of a method fordepositing a material on a surface of a wafer, in accordance with oneembodiment of the present invention;

FIG. 10B is an illustration showing an expansion of the operation 1001of FIG. 10A, in accordance with one embodiment of the present invention;

FIG. 10C is an illustration showing an expansion of the operation 1003of FIG. 10A, in accordance with one embodiment of the present invention;and

FIG. 10D is an illustration showing an expansion of the operation 1005of FIG. 10A, in accordance with one embodiment of the present invention.

DETAILED DESCRIPTION

Broadly speaking, a method and an apparatus are provided for depositinga material on a semiconductor wafer (“wafer”). More specifically, thepresent invention provides a method and apparatus for selectivelyheating a material present on a surface of the wafer exposed to anelectroless plating solution. The selective heating is provided byapplying radiant energy to the wafer surface. The radiant energy isdefined to have a wavelength range that will preferentially heat thematerial present on the wafer surface relative to other surroundingmaterials. The radiant energy can be adjusted during the materialdeposition process to optimally follow changing conditions of materialspresent on the wafer surface. The selective heating of the wafer surfacecauses a temperature increase at an interface between the wafer surfaceand the electroless plating solution. The temperature increase at theinterface in turn causes a plating reaction to occur at the wafersurface. Thus, material is deposited on the wafer surface through anelectroless plating reaction that is initiated and controlled by varyingthe temperature of the wafer surface using an appropriately definedradiant energy source.

In the following description, numerous specific details are set forth inorder to provide a thorough understanding of the present invention. Itwill be apparent, however, to one skilled in the art that the presentinvention may be practiced without some or all of these specificdetails. In other instances, well known process operations have not beendescribed in detail in order not to unnecessarily obscure the presentinvention.

FIG. 2A is an illustration showing an apparatus for depositing amaterial on a surface of a wafer, in accordance with one embodiment ofthe present invention. The apparatus includes a tank 201 defined by anenclosing wall and a bottom. The tank 201 is configured to contain anelectroless plating solution 203. The present invention can beimplemented using suitable and commonly available electroless platingsolutions, such as Cuposit250, manufactured by Shipley Company.Alternatively, a customized electroless plating solution can bedeveloped for use with the present invention. It is preferable, however,that the electroless plating solution 203 be defined to react atmoderate to higher temperatures. For example, in one embodiment, theelectroless plating solution 203 will not react at temperatures belowabout 40° C.

In one embodiment, an inlet 213 is provided for supplying theelectroless plating solution 203 to the tank 201, and an outlet 215 isprovided for removing the electroless plating solution 203 from the tank201. Thus, the inlet 213 and the outlet 215 can be used to control aflow of the electroless plating solution 203 through the tank 201. Inone embodiment, the electroless plating solution 203 can be periodicallyreplenished. In another embodiment, a continuous flow of the electrolessplating solution 203 through the tank 201 can be provided. It shouldalso be appreciated that baffles and other flow diverting mechanisms canbe disposed within the tank 201 to provide a desired directionality anduniformity to the flow of electroless plating solution 203 through thetank 201. Furthermore, in one embodiment, a heat exchanger 221 can beimplemented within the tank 201 to maintain a temperature of theelectroless plating solution 203 within the tank 201. In anotherembodiment, the heat exchanger 221 can be implemented outside of thetank 201 to maintain the temperature of the electroless plating solution203 entering the tank 201. In one embodiment, the heat exchanger 221 isrepresented as a coil over which the electroless plating solution 203 isflowed. However, it should be appreciated that any other type of heatexchanger 221 suitable for affecting the temperature of the electrolessplating solution 203 can be implemented with the present invention.Preferably, the electroless plating solution 203 is maintained at asubstantially low temperature. For example, in one embodiment, theelectroless plating solution 203 is maintained at a temperature belowabout 15° C., wherein a lower bound of the electroless plating solution203 temperature is limited by solubility.

The apparatus of FIG. 2A also includes a wafer support structure 205disposed within the tank 201 to support a wafer 207 at a submergedposition within the electroless plating solution 203. In one embodiment,the wafer support structure 205 is defined to provide substantiallycomplete contact with a bottom surface of the wafer 207. However, inother embodiments, the wafer support structure 205 can be defined toprovide partial contact with the bottom surface of the wafer 207. Forexample, in one embodiment, the wafer support structure 205 can includea number of raised areas configured to contact the bottom of the wafer207. The number of raised areas can be dispersed over the wafer supportstructure 205 to allow for traversal of a wafer transport device betweenthe bottom of the wafer 207 and the top of the wafer support structure205. In another exemplary embodiment, the wafer support structure 205can include a number of lifting pins configured to contact the bottom ofthe wafer 207. The number of lifting pins can be actuated to raise andlower the wafer 207 with respect to the wafer support structure 205,thus facilitating transport of the wafer 207 to and from the wafersupport structure 205. In other embodiments, the wafer support structure205 can include rollers or finger-like structures. Regardless of thespecific wafer support structure 205 embodiment, the wafer supportstructure 205 is configured to securely hold the wafer 207 during amaterial deposition process. In one embodiment, the wafer supportstructure 205 is configured to oscillate during the material depositionprocess to enhance exposure of a top surface of the wafer 207 to theelectroless plating solution 203. In this embodiment, the wafer supportstructure 205 can be configured to oscillate in a horizontal direction219, a vertical direction 217, a rotational direction, or anycombination of the above directions. Preferably, the wafer supportstructure 205 is configured to support the wafer 207 in an orientationthat minimizes a potential for entrapment of gas bubbles that may evolvefrom the electroless plating reactions.

The apparatus of FIG. 2A further includes a radiant energy source 209disposed above the wafer support structure 205. The radiant energysource 209 is oriented to direct radiant energy 211 toward the wafer 207supported by the wafer support structure 205 at the submerged positionwithin the electroless plating solution 203. The radiant energy source209 is configured to generate radiant energy 211 having a wavelengthrange that is capable of selectively heating a material present at thesurface of the wafer 207 (i.e., a material upon which the radiant energy211 will be incident). For purposes of discussion, the radiant energy211 is characterized in terms of wavelength. However, it should beunderstood that the radiant energy 211 can be equivalently characterizedin terms of frequency. For example, if the surface of the wafer 207 isdefined by a material “X”, the radiant energy 211 is defined to have awavelength range that will be absorbed by the atoms/molecules ofmaterial “X” to increase excitation of the atoms/molecules of material“X”. The increased excitation of the atoms/molecules of material “X”will result in a heating and increased temperature of the material “X”.Preferably, the wavelength range of radiant energy 211 necessary toexcite the material “X” atoms/molecules will cause zero or limitedexcitation of atoms/molecules in surrounding materials. Some immediatelysurrounding materials include different wafer 207 materials that areunderlying or adjacent to material “X” and a bulk volume of theelectroless plating solution 203. Thus, the radiant energy 211 generatedby the radiant energy source 209 is configured to selectively heat aspecific material present on the surface of the wafer 207, regardless ofan orientation of the specific material present on the surface of thewafer 207. For example, to selectively heat Cu present on the surface ofthe wafer 207, the radiant energy may be defined to have a wavelength ofabout 250 nanometers.

In one embodiment, the electroless plating solution 203 is maintained ata sufficiently low temperature at which an electroless plating reactionwill not occur. Thus, immersion of the wafer 207 into the electrolessplating solution 203 is not sufficient to cause material deposition tooccur on the wafer 207 surface through the electroless plating reaction.However, selective heating of a particular material present on the wafer207 surface through application of the radiant energy 211 will increasethe temperature of the particular material to a point at which theelectroless plating reaction will occur. Since the particular materialis selectively heated by the radiant energy 211, the electroless platingreaction will occur at the interface between the particular material andthe electroless plating solution 203. In one embodiment, the radiantenergy source 209 is capable of generating the radiant energy 211 in apulsed manner. Application of the radiant energy 211 in the pulsedmanner to the particular material on the wafer 207 surface can be usedto heat and quench the particular material in a cyclic manner. Infollowing, through pulsing of the radiant energy 211, electrolessplating reactions at the interface between the particular material andthe electroless plating solution 203 can be controlled in the cyclic(i.e., pulsed) manner that allows for increased control of materialdeposition. In one embodiment, a duration of each radiant energy pulseis within a range extending from about 1 millisecond to about 500milliseconds. It should also be appreciated that an increase in radiantenergy intensity will result in an increased temperature of theparticular material excited by the radiant energy, with a correspondingincrease in electroless plating reaction rate. Thus, with the apparatusof FIG. 2A, materials can be deposited on the wafer 207 surface throughelectroless plating reactions that are initiated and controlled byvarying the temperature of the particular material on the wafer 207surface using appropriately defined and controlled radiant energy 211.

Preferably, the radiant energy source 209 is configured to apply asubstantially uniform amount of radiant energy 211 to the top surface ofthe wafer 207. In the embodiment of FIG. 2A, the radiant energy source209 is configured to maintain a stationary position during the materialdeposition process. However, the stationary radiant energy source 209 iscapable of uniformly applying radiant energy 211 over the top surface ofthe wafer 207. It should be appreciated that a variety of radiant energy211 reflecting surfaces can be used in conjunction with the stationaryradiant energy source 209 to achieve uniform application of the radiantenergy 211 to the top surface of the wafer 207. Also, in an alternativeembodiment, an array of radiant energy sources can be implemented touniformly apply the radiant energy 211 over the top surface of the wafer207. Furthermore, various types of monitoring equipment commonly used inthe wafer fabrication process to collect data associated with a surfacecondition of the wafer can be implemented with the apparatus of FIG. 2A.Data obtained from the monitoring equipment can be used as feedback tocontrol the radiant energy source 209.

FIG. 2B is an illustration showing a variation of the apparatus of FIG.2A, in accordance with one embodiment of the present invention. As withFIG. 2A, FIG. 2B includes the tank 201 having the inlet 213 and theoutlet 215, the electroless plating solution 203, and the heat exchanger221. However, with respect to FIG. 2B, the radiant energy source 209 isdisposed below a bottom surface of the wafer 207. Also, the wafersupport structure 205 is modified to support the wafer 207 around itsperiphery. In the embodiment of FIG. 2B, the radiant energy 211 isdirected from the radiant energy source 209 toward the bottom the wafer207. The radiant energy 211 traverses through the wafer 207 to a topsurface of the wafer 207. It should be appreciated that top surface ofthe wafer 207 may be defined by a topography having a number of peaksand valleys separated by slopes of varying angle. The radiant energy 207is defined to have a wavelength range that will allow for minimalinteraction with the wafer 207 during traversal through the wafer 207.However, upon reaching the top surface of the wafer 207, the radiantenergy 211 wavelength range is defined to selectively heat a materialpresent on the top surface of the wafer 207. Thus, as with FIG. 2A, theapparatus of FIG. 2B provides for material deposition on the wafer 207surface through electroless plating reactions, wherein the electrolessplating reactions are initiated and controlled by varying thetemperature of the wafer 207 surface using appropriately defined andcontrolled radiant energy 211.

FIG. 3 is an illustration showing a variation of the apparatus of FIG.2A, in accordance with one embodiment of the present invention. Ratherthat using the stationary radiant energy source 209, as shown in FIG.2A, the apparatus of FIG. 3 implements a collimated radiant energysource 301. The collimated radiant energy source 301 is configured tocollimate the radiant energy 211 within a limited solid angle. In oneembodiment, the collimated radiant energy source 301 is oriented suchthat the limited solid angle of radiant energy 211 is directed to besubstantially perpendicular to a plane within which the wafer 207 lies.The collimated radiant energy source 301 is further configured to bescanned over the surface of the wafer 207 surface as indicated by arrows303. However, the collimated radiant energy source 301 is not limited tobeing scanned in the directions indicated by the arrows 303. It shouldbe appreciated that the collimated radiant energy source 301 can beconfigured to be scanned in any direction over the surface of the wafer207. Additionally, the collimated radiant energy source 301 can beconfigured to rotate in a conical manner about an axis that extends froma point of rotation perpendicularly through the plane within which thewafer 207 lies. Regardless of the specific scanning motion utilized, thecollimated radiant energy source 301 is configured to apply asubstantially uniform amount of radiant energy 211 to the top surface ofthe wafer 207.

FIG. 4 is an illustration showing another variation of the apparatus ofFIG. 2A, in accordance with one embodiment of the present invention.Rather than using the tank 201, as shown in FIG. 2A, the apparatus fordepositing material on the surface of the wafer 207 as shown in FIG. 3uses a vessel 401. The vessel is defined by a top 403, a bottom, and anenclosing wall. As with the tank 201, the vessel 401 is also configuredto contain the electroless plating solution 203. Additionally, thevessel 401 can incorporate the inlet 213 for supplying the electrolessplating solution 203 to the vessel 401, and the outlet 215 for removingthe electroless plating solution 203 from the vessel 401. With respectto FIG. 4, the wafer support structure 205, the heat exchanger 221, theradiant energy source 209, and the radiant energy 211 are equivalent tothose described with respect to FIG. 2A. With respect to FIG. 4,however, the radiant energy 211 is transmitted through the top 403 ofthe vessel 401 to reach the wafer 207. Correspondingly, the top 403 ofthe vessel 401 is composed of a material (“vessel top material”) capableof transmitting the radiant energy 211 emitted from the radiant energysource 209 to an interior of the vessel 401. In various exemplaryembodiments, the vessel top material can be either quartz, glass, orpolymer, among others. In one embodiment, the top material is configuredto transmit the radiant energy 211 without substantially modifying thewavelength range and direction of the radiant energy 211. In anotherembodiment, the vessel top material is configured to modify thewavelength range of the radiant energy 211 to a wavelength rangenecessary to selectively heat the desired material present on the topsurface of the wafer 207, without modifying a direction of the radiantenergy 211. In another embodiment, the vessel top material is configuredto modify the direction of the radiant energy 211 to be uniformlydistributed over the top surface of the wafer 207, without modifying awavelength range of the radiant energy 211. In yet another embodiment,the vessel top material is configured to modify both the wavelengthrange and the direction of the radiant energy 211 to achieve uniformdistribution of radiant energy 211 over the top surface of the wafer207.

For purposes of discussion, a site on the wafer 207 surface at which anelectroless plating reaction occurs (i.e., material deposition occurs)is referred to as a nucleation site. A number of nucleation sites perunit area of wafer 207 surface is referred to as a nucleation density.In some material deposition applications, it may be desirable toincrease the nucleation density. One way to increase the nucleationdensity is to increase the pressure of the electroless plating solution.The vessel 401 can be configured to contain the electroless platingsolution 203 at an elevated pressure, i.e., a pressure above atmosphericpressure. At the elevated pressure, the nucleation density on the wafer207 surface during the material deposition process will be increased.Also, at elevated pressures, bubble formation on the wafer surfaceresulting from the electroless plating reactions can be suppressed. Inone embodiment, flow of the electroless plating solution 203 through theinlet 213 and the outlet 215 can be throttled to act as a pressurecontrol capable of controlling a pressure of the electroless platingsolution 203 within the vessel 401. In another embodiment, a pressurizercan be implemented as a pressure control within an electroless platingsolution circulation system to control the pressure of the electrolessplating solution 203 within the vessel 401. The heat exchanger 221, aspreviously described with respect to FIG. 2A, is used to control thetemperature of the electroless plating solution 203 at elevated pressurewithin the vessel 401. It should be appreciated that the electrolessplating solution 203 can be maintained at any suitable pressure andtemperature that is compatible with chemistry requirements of theelectroless plating solution 203 and mechanical requirements of thevessel 401. Preferably, however, the temperature of the bulk electrolessplating solution 203 within the vessel is maintained below thetemperature at which the electroless plating reaction occurs. Thus, theelectroless plating reaction will only occur at the interface betweenthe selectively heated wafer 207 surface material and the electrolessplating solution 203. Also, the cooler bulk electroless plating solution203 will serve to quench the selectively heating wafer 207 surfacematerial when applying the radiant energy 211 in the pulsed manner.

FIG. 5 is an illustration showing a variation of the apparatus of FIG.4, in accordance with one embodiment of the present invention. As withFIG. 4, the apparatus for depositing material on the surface of thewafer 207 as shown in FIG. 5 also uses a vessel 501. However, incontrast to FIG. 4, the radiant energy source 209 shown in FIG. 5 isdisposed within the vessel 501. Thus, the radiant energy source 209 isdisposed within the electroless plating solution 203 above the wafer207. Therefore, a top 503 of the vessel 501 is not required to transmitthe radiant energy 211 emitted by the radiant energy source 209. In somesituations it may not be appropriate to use of the vessel top materialto assist in conditioning the radiant energy 211 in terms of wavelengthrange and direction. Also, in some situations it may be desirable tomaintain the electroless plating solution at an elevated pressure thatis not easily withstood by vessel top materials that are sufficient fortransmitting the radiant energy 211. By disposing the radiant energysource 209 within the vessel 501, considerations of vessel top materialstrength and how the vessel top material will affect the wavelengthrange and direction of the radiant energy 211 can be avoided, whilemaintaining the ability to control the pressure of the electrolessplating solution 203.

In the embodiments of FIGS. 4 and 5, the radiant energy source 209 isconfigured to maintain a stationary position during the materialdeposition process. However, the stationary radiant energy source 209 iscapable of uniformly applying radiant energy 211 over the top surface ofthe wafer 207. It should be appreciated that a variety of radiant energy211 reflecting surfaces can be used in conjunction with the stationaryradiant energy source 209, to achieve uniform application of the radiantenergy 211 to the top surface of the wafer 207. With respect to FIG. 4,the radiant energy 211 reflecting surfaces can be positioned interior toand/or exterior to the vessel 401. With respect to FIG. 5, the radiantenergy 211 reflecting surfaces can be positioned interior to the vessel501.

FIG. 6 is an illustration showing an apparatus for depositing materialon the surface of the wafer 207 which combines the collimated radiantenergy source 301 of FIG. 3 with the vessel 401 of FIG. 4, in accordancewith one embodiment of the present invention. In other words, theembodiment of FIG. 6 represents the embodiment of FIG. 4 having thestationary radiant energy source 209 replaced with the collimatedradiant energy source 301. The features of the collimated radiant energysource 301 previously discussed with respect to FIG. 3 equally apply tothe collimated radiant energy source 301 implemented in the embodimentof FIG. 6.

FIG. 7 is an illustration showing an apparatus for depositing materialon the surface of the wafer 207 which combines the collimated radiantenergy source 301 of FIG. 3 with the vessel 501 of FIG. 5, in accordancewith one embodiment of the present invention. In other words, theembodiment of FIG. 7 represents the embodiment of FIG. 5 having thestationary radiant energy source 209 replaced with the collimatedradiant energy source 301. The features of the collimated radiant energysource 301 previously discussed with respect to FIG. 3 equally apply tothe collimated radiant energy source 301 implemented in the embodimentof FIG. 7.

FIG. 8 is an illustration showing an apparatus for depositing materialon the surface of the wafer 207, in accordance with one embodiment ofthe present invention. The apparatus includes a tank 801 defined by anenclosing wall and a bottom. The tank 801 is configured to contain theelectroless plating solution 203. In one embodiment, the tank 801 isconfigured to have an inlet 807 and an outlet 809 for supplying andremoving, respectively, the electroless plating solution 203. Thus,similar to the inlet 213 and the outlet 215 of FIG. 2A, the inlet 807and the outlet 809 of FIG. 8 can be used to control a flow of theelectroless plating solution 203 through the tank 801. Also, analogousto FIG. 2A, the heat exchanger 221 can be implemented within the tank801 to maintain a temperature of the electroless plating solution 203within the tank 801. Alternatively, the heat exchanger 221 can beimplemented outside of the tank 801 to maintain the temperature of theelectroless plating solution 203 entering the tank 801.

The apparatus of FIG. 8 also includes a wafer holder (not shown)configured to dip the wafer 207 into the electroless plating solution203 contained within the tank 801. The wafer holder is also configuredto remove the wafer 207 from the electroless plating solution 203. Thewafer holder is suitably configured to engage and securely hold thewafer 207 as the wafer 207 is dipped into and removed from theelectroless plating solution 203 within the tank 801. Also, the waferholder is capable of moving the wafer at a controlled rate within asubstantially constant plane of orientation.

The apparatus of FIG. 8 further includes the collimated radiant energysource 301 disposed above the electroless plating solution 203. Thecollimated radiant energy source 301 is oriented to direct the radiantenergy 211 toward the wafer 207 upon removal of the wafer 207 from theelectroless plating solution 203. The radiant energy 211 is equivalentto that previously discussed with respect to FIG. 2A. Thus, the radiantenergy 211 has a wavelength range that is capable of selectively heatinga particular material present at a surface of the wafer 207 upon whichthe radiant energy 211 is incident. As the wafer 207 is removed from theelectroless plating solution 203 within the tank 801, a meniscus ofelectroless plating solution 811 adheres to the surface of the wafer207. Thus, the selective heating of the particular material by theradiant energy 211 causes electroless plating reactions to occur at theinterface between the particular material and the meniscus ofelectroless plating solution 811.

In one embodiment, the collimated radiant energy source 301 isconfigured to collimate the radiant energy 211 within a limited solidangle. In this embodiment, the collimated radiant energy source 301 isoriented such that the limited solid angle of radiant energy 211 isdirected to be substantially perpendicular to the plane of orientationwithin which the wafer 207 moves. The collimated radiant energy source301 is also configured to be scanned over the surface of the wafer 207.It should be appreciated that in this embodiment, the collimated radiantenergy source 301 can be configured to scan in any direction over thesurface of the wafer 207. Also, in this embodiment, the collimatedradiant energy source 301 can be configured to rotate in a conicalmanner about an axis that extends from a point of rotationperpendicularly through the plane of orientation within which the wafer207 moves. However, regardless of the specific scanning or rotationalmotion utilized, the collimated radiant energy source 301 of thisembodiment is configured to apply a substantially uniform amount ofradiant energy 211 to the surface of the wafer 207 as the wafer 207 isremoved from the electroless plating solution 203. In anotherembodiment, the collimated radiant energy source 301 is configured toemit the radiant energy within a narrow solid angle that subtends adiameter of the wafer. In this embodiment, the collimated radiant energysource 301 can be maintained in a stationary position with respect tothe tank 801 while applying a substantially uniform amount of radiantenergy 211 to the surface of the wafer 207 as the wafer 207 is removedfrom the electroless plating solution 203. In yet another embodiment, anarray of collimated radiant energy sources 301 can be positioned toapply radiant energy 211 to the surface of the wafer 207 in asubstantially uniform manner as the wafer 207 is removed from theelectroless plating solution 203.

FIG. 8 also illustrates a sequence of operational states of theapparatus. In a state 1, the wafer 207 is positioned above theelectroless plating solution 203 contained within the tank 801. In thestate 1, the collimated radiant energy source 301 is inactive. In astate 2, the wafer 207 is dipped into the electroless plating solution203 contained within the tank 801 as indicated by an arrow 803. In thestate 2, the collimated radiant energy source 301 is inactive. In astate 3, the wafer 207 is fully submerged within the electroless platingsolution 203 contained within the tank 801. In the state 3, thecollimated radiant energy source 301 is inactive. In a state 4, thecollimated radiant energy source is activated, and the wafer 207 isremoved from the electroless plating solution 203 contained within thetank 801 as indicated by an arrow 805. As the wafer 207 is removed fromthe electroless plating solution 203, the meniscus of electrolessplating solution 811 adheres to the surface of the wafer 207. Theradiant energy 211 incident upon the wafer 207 surface causes aparticular material present on the wafer 207 surface to be heated.Heating of the particular material present on the wafer 207 surfacecauses an electroless plating reaction to occur at an interface betweenthe particular material and the meniscus of electroless plating solution811. As the wafer 207 is completely removed from the electroless platingsolution 203 contained within the tank 801, the entire wafer surface isuniformly exposed to the radiant energy 211. Thus, material is uniformlydeposited over the wafer 207 surface through uniformly distributedelectroless plating reactions. It should be appreciated that duringoperation of the apparatus of FIG. 8, the flow and temperature of theelectroless plating solution 203 within the tank 801 can be controlledas previously described with respect to FIG. 2A.

FIG. 9 is an illustration showing an apparatus for depositing materialon the surface of the wafer 207, in accordance with one embodiment ofthe present invention. The apparatus includes a tank 901 defined by anenclosing wall and a bottom. The tank 901 is configured to contain theelectroless plating solution 203. In one embodiment, the tank 901 isconfigured to have an inlet 911 and an outlet 913 for supplying andremoving, respectively, the electroless plating solution 203. Thus,similar to the inlet 213 and the outlet 215 of FIG. 2A, the inlet 911and the outlet 913 of FIG. 9 can be used to control a flow of theelectroless plating solution 203 through the tank 901. Also, analogousto FIG. 2A, the heat exchanger 221 can be implemented within the tank901 to maintain a temperature of the electroless plating solution 203within the tank 901. Alternatively, the heat exchanger 221 can beimplemented outside of the tank 901 to maintain the temperature of theelectroless plating solution 203 entering the tank 901.

The apparatus of FIG. 9 also includes a wafer support and rotationmechanism 907. The wafer support and rotation mechanism 907 isconfigured to support the wafer 207 at a position in which a lowerportion of the wafer is submerged within the electroless platingsolution 203. In one embodiment, the wafer support and rotationmechanism 907 includes a number of rollers disposed about a periphery ofthe wafer 207. Each of the number of rollers are defined to support androtate the wafer in a controlled manner within a substantially constantplane of orientation, as indicated by arrows 909. In one embodiment, thewafer holder 907 is also configured to lower the wafer 207 about halfwayinto the electroless plating solution 203 and remove the wafer 207 fromthe electroless plating solution 203 upon completion of the materialdeposition process.

The apparatus of FIG. 9 further includes a collimated radiant energysource 903 disposed above the electroless plating solution 203. Thecollimated radiant energy source 903 is oriented to direct the radiantenergy 211 toward the wafer 207 upon rotation of the wafer 207 out ofthe electroless plating solution 203. The radiant energy 211 isequivalent to that previously discussed with respect to FIG. 2A. Thus,the radiant energy 211 has a wavelength range that is capable ofselectively heating a particular material present at a surface of thewafer 207 upon which the radiant energy 211 is incident. As the wafer207 is rotated out of the electroless plating solution 203 within thetank 901, a meniscus of electroless plating solution 915 adheres to thesurface of the wafer 207. Thus, the selective heating of the particularmaterial by the radiant energy 211 causes electroless plating reactionsto occur at the interface between the particular material and themeniscus of electroless plating solution 915. Additionally, thecollimated radiant energy source 903 is further configured to scanacross the wafer 207 surface, as indicated by arrows 905. Scanning ofthe collimated radiant energy source 903 is controlled to ensure that asubstantially uniform amount of the radiant energy 211 is applied overthe surface of the wafer 207 as the wafer 207 is rotated out of theelectroless plating solution 203. Thus, upon completion of eachrevolution of the wafer 207 out of the electroless plating solution 203,the entire wafer 207 surface is uniformly exposed to the radiant energy211. In following, material is uniformly deposited over the wafer 207surface through uniformly distributed electroless plating reactions.

In one embodiment, the collimated radiant energy source 903 isconfigured to collimate the radiant energy 211 within a limited solidangle. In this embodiment, the collimated radiant energy source 903 isoriented such that the limited solid angle of radiant energy 211 isdirected to be substantially perpendicular to the plane of orientationwithin which the wafer 207 rotates. The collimated radiant energy source903 can be further configured to rotate in a conical manner about anaxis that extends from a reference point attached to the collimatedradiant energy source 903 perpendicularly through the plane oforientation within which the wafer 207 rotates. In another embodiment,an array of collimated radiant energy sources 903 can be positioned toapply radiant energy 211 to the surface of the wafer 207 in asubstantially uniform manner as the wafer 207 is rotated out of theelectroless plating solution 203.

FIG. 10A is an illustration showing a flowchart of a method fordepositing a material on a surface of a wafer, in accordance with oneembodiment of the present invention. The method includes an operation1001 in which electroless plating solution is applied to a surface of awafer. A temperature of the electroless plating solution applied to thewafer surface is maintained below a temperature at which an electrolessplating reaction will occur. In one embodiment, the temperature of theelectroless plating solution is maintained substantially below thetemperature at which the electroless plating reaction will occur. Themethod also includes an operation 1003 in which the wafer surface isexposed to radiant energy. The radiant energy is used to selectivelyheat a particular material present on the wafer surface to a state atwhich electroless plating reactions will occur at an interface betweenthe particular material on the wafer surface and the electroless platingsolution. In one embodiment, the wafer surface is exposed to the radiantenergy in a substantially uniform manner to cause the electrolessplating reactions to occur in a substantially uniform amount over thewafer surface. Consequently, uniformity in electroless plating reactionsover the wafer surface will result in material deposition uniformityover the wafer surface. The method further includes an operation 1005 inwhich the radiant energy is controlled to maintain selective heating ofthe particular material present on the wafer surface. In one embodiment,the wavelength range of the radiant energy is controlled to causepreferential excitation of the atoms/molecules of the particularmaterial without exciting the atoms/molecules of different surroundingmaterials. It should be understood that controlling a frequency of theradiant energy is equivalent to controlling the wavelength range of theradiant energy. Preferential excitation of the atoms/molecules of theparticular material will cause the particular material to increase intemperature. In various exemplary embodiments, the particular materialcan be defined as either a barrier layer or a seed layer. It should beappreciated, however, that the radiant energy can be configured to allowthe method of the present invention to be applied to essentially anymaterial present on the wafer surface.

FIG. 10B is an illustration showing an expansion of the operation 1001of FIG. 10A, in accordance with one embodiment of the present invention.In one embodiment, the operation 1001 includes two options (“Option 1”and “Option 2”) for applying the electroless plating solution to thewafer surface. Option 1 includes an operation 1007 in which the wafer issubmerged in a bath of electroless plating solution. Once the wafer issubmerged in the bath of electroless plating solution, Option 1 branchesinto two sub-options (“Option 1A” and “Option 1B”). Option 1A includesan operation 1009 in which the wafer is maintained in a submergedposition within the bath of electroless plating solution. In oneembodiment, the electroless plating solution is caused to flow over thewafer surface while submerged. In another embodiment, the wafer iscaused to oscillate while submerged. Option 1B includes an operation1011 in which the wafer is removed from the submerged position withinthe electroless plating solution. When removed from the submergedposition in the operation 1011, a meniscus of the electroless platingsolution adheres to the wafer surface. Thus, the electroless platingsolution remains applied to the wafer surface even though the wafer isremoved from the submerged position. In one embodiment, a sequence ofsubmerging and removing the wafer from the bath of the electrolessplating solution is performed repeatedly as the wafer surface beingremoved from the bath is exposed to the radiant energy according to theoperation 1003. In this embodiment, the sequence of submerging andremoving continues until a desired amount of material is deposited onthe surface of the wafer through electroless plating reactions. In oneembodiment, the sequence of submerging and removing the wafer from thebath of electroless plating solution is performed by dipping the waferinto the bath of electroless plating solution. In an alternativeembodiment, the sequence of submerging and removing the wafer from thebath of electroless plating solution is performed by rotating a portionof the wafer through the bath of electroless plating solution.

Option 2 is provided as an alternative to Option 1 for applying theelectroless plating solution to the wafer surface. Option 2 includes anoperation 1013 in which the wafer is enclosed within a vessel containingthe electroless plating solution. In one embodiment, the vessel iscompletely filled with the electroless plating solution. In anotherembodiment, the vessel is partially filled with the electroless platingsolution, wherein the wafer is submerged within the electroless platingsolution. Enclosure of the wafer within the vessel allows for anincrease in the pressure of the electroless plating solution applied tothe wafer. Increasing the pressure of the electroless plating solutionresults in an increased density of nucleation sites at which electrolessplating reactions will occur on the wafer surface. Additionally,increasing the pressure of the electroless plating solution can be usedto suppress formation of bubbles that evolve from electroless platingreactions.

FIG. 10C is an illustration showing an expansion of the operation 1003of FIG. 10A, in accordance with one embodiment of the present invention.The operation 1003 for using the radiant energy to selectively heat aparticular material present on the wafer surface to initiate electrolessplating reactions is described in a context of the options for applyingthe electroless plating solution to the wafer surface (i.e., Option 1A,Option 1B, and Option 2). In accordance with Option 1A, as previouslydiscussed with respect to FIG. 10B, an operation 1015 is performed inwhich the wafer is exposed to the radiant energy while being maintainedin the submerged position within the bath of electroless platingsolution. In accordance with Option 1B, as previously discussed withrespect to FIG. 10B, an operation 1017 is performed in which the waferis exposed to the radiant energy when removed from the submergedposition within the bath of electroless plating solution. In oneembodiment of operation 1017, the wafer surface is exposed to theradiant energy immediately upon removal from the bath of electrolessplating solution. In accordance with Option 2, as previously discussedwith respect to FIG. 10B, an operation 1019 is performed in which thewafer is exposed to the radiant energy while enclosed within the vesselcontaining the electroless plating solution. In one embodiment, a sourceof the radiant energy is disposed within the vessel. In anotherembodiment, the radiant energy is transmitted through a wall of thevessel to reach the wafer surface.

In addition to the options for applying the electroless plating solutionto the wafer and exposing the wafer to the radiant energy (i.e., Option1A, Option 1B, and Option 2), there are also options for how the radiantenergy is applied to the wafer surface. In an operation 1021, theradiant energy is applied the wafer surface in steady manner. In otherwords, the radiant energy is constantly applied to the wafer surface forthe duration of the material deposition process. Alternatively, in anoperation 1023, the radiant energy is applied to the wafer surface in apulsed manner during the material deposition process. In one embodiment,a pulse of the radiant energy is defined to have a duration within arange extending from about 1 millisecond to about 500 milliseconds.Also, in one embodiment, a sufficient amount of time is provided betweenpulses of the radiant energy to allow the electroless plating solutionto quench the wafer surface. It should be appreciated that both theconstant and the pulsed radiant energy applications can be used with anyof Options 1A, 1B, and 2.

Options also exist for achieving uniform application of the radiantenergy over the wafer surface. In an operation 1025, the radiant energyis simultaneously applied over the entire wafer surface. In an operation1027, the radiant energy is collimated and scanned over the entire wafersurface. It should be appreciated that either option of operations 1025and 1027 can be used with both the constant and the pulsed radiantenergy applications of operations 1021 and 1023. However, regardless ofthe specific method by which the radiant energy is applied to the wafersurface, the radiant energy is applied in a substantially uniform mannerover the entire wafer surface.

FIG. 10D is an illustration showing an expansion of the operation 1005of FIG. 10A, in accordance with one embodiment of the present invention.In one embodiment, the operation 1005 for controlling the radiant energyto maintain selective heating of the particular material present on thewafer surface includes an operation 1029 for monitoring a surfacecondition of the wafer. The monitoring of operation 1029 providesfeedback to ensure that the wavelength range of the radiant energy isestablished to selectively heat the desired material present at thesurface of the wafer. Surface condition parameters monitored in theoperation 1029 can include a surface material type, a surface materialthickness, and a surface material temperature. It should be appreciated,however, that any other surface condition parameter commonly monitoredduring wafer fabrication processes can also be monitored during theoperation 1029. In one embodiment, the operation 1005 can also includean operation 1031 in which the radiant energy is adjusted according tothe monitored surface conditions obtained in the operation 1029.

As described above, the present invention provides a method andapparatus for selectively heating a surface of the wafer exposed to anelectroless plating solution. The selective heating is provided byapplying radiant energy to the wafer surface. The radiant energy isdefined to have a wavelength range that will preferentially heat amaterial present on the wafer surface relative to other surroundingmaterials. The radiant energy can be adjusted during the plating processto optimally follow changing conditions of the material present on thewafer surface. The selective heating of the wafer surface causes atemperature increase at an interface between the wafer surface and theelectroless plating solution. The temperature increase at the interfacein turn causes a plating reaction to occur at the wafer surface. Thus,material is deposited on the wafer surface through an electrolessplating reaction that is initiated and controlled by varying thetemperature of the wafer surface using an appropriately defined radiantenergy source.

The advantages provided by the present invention are numerous. Forexample, with the present invention, materials can be deposited on thewafer surface to conform to a topography of the wafer surface. Also, thepresent invention allows for denser material deposition, smaller grainsizes, and improved adhesion of deposited materials. Furthermore, thepresent invention provides for improved material deposition on wafersurfaces having smaller minimum geometries. For example, the presentinvention can be used to uniformly fill narrow gaps between high aspectratio features on the wafer surface.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. It istherefore intended that the present invention includes all suchalterations, additions, permutations, and equivalents as fall within thetrue spirit and scope of the invention.

1. A method for depositing a material on a surface of a wafer,comprising: submerging a portion of a wafer in a bath of an electrolessplating solution; removing the portion of the wafer from the bath of theelectroless plating solution such that a meniscus of the electrolessplating solution is retained on the portion of the wafer upon itsremoval from the bath of the electroless plating solution; exposing theportion of the wafer having the meniscus of the electroless platingsolution retained thereon to radiant energy upon removal of the portionof the wafer from the bath of electroless plating solution; andcontrolling a wavelength range of the radiant energy to cause theradiant energy to selectively heat a first material present on a surfaceof the portion of the wafer in exposure to the meniscus of theelectroless plating solution so as to increase a temperature of thefirst material to a state at which a plating reaction occurs on thefirst material.
 2. A method for depositing a material on a surface of awafer as recited in claim 1, further comprising: maintaining the bath ofelectroless plating solution at a temperature at which a platingreaction does not readily occur.
 3. A method for depositing a materialon a surface of a wafer as recited in claim 1, wherein the portion ofthe wafer is exposed to the radiant energy immediately upon removal ofthe portion of the wafer from the bath of the electroless platingsolution.
 4. A method for depositing a material on a surface of a waferas recited in claim 1, wherein a sequence of submerging the portion ofthe wafer in the bath of the electroless plating solution and removingthe portion of the wafer from the bath of the electroless platingsolution is performed repeatedly until a desired amount of material isdeposited on the first material.
 5. A method for depositing a materialon a surface of a wafer as recited in claim 1, wherein a sequence ofsubmerging the portion of the wafer in the bath of the electrolessplating solution and removing the portion of the wafer from the bath ofthe electroless plating solution is performed repeatedly for differentportions of the wafer until a desired amount of material is deposited onthe first material over an entirety of the wafer.
 6. A method fordepositing a material on a surface of a wafer as recited in claim 1,wherein submerging the portion of the wafer in the bath of theelectroless plating solution and removing the portion of the wafer fromthe bath of the electroless plating solution is performed by rotatingthe portion of the wafer through the bath of the electroless platingsolution.
 7. A method for depositing a material on a surface of a waferas recited in claim 1, wherein submerging the portion of the wafer inthe bath of the electroless plating solution is performed by dipping theportion of the wafer into the bath of the electroless plating solution.8. A method for depositing a material on a surface of a wafer as recitedin claim 1, further comprising: monitoring conditions at the surface ofthe portion of the wafer to ensure that the wavelength range of theradiant energy is established to selectively heat the first materialpresent on the surface of the portion of the wafer.
 9. A method fordepositing a material on a surface of a wafer as recited in claim 8,wherein the monitored conditions at the surface of the portion of thewafer include a material type, a material thickness, and a materialtemperature.
 10. A method for depositing a material on a surface of awafer as recited in claim 1, wherein the first material is disposed onthe surface of the portion of the wafer near a second material, whereinexposure of the portion of the wafer to the radiant energy causes boththe first material and the second material to be exposed to the radiantenergy, wherein the radiant energy is controlled to cause heating of thefirst material without heating the second material, thereby causingplating reactions to occur on the first material without causing platingreactions to occur on the second material.
 11. An apparatus fordepositing a material on a surface of a wafer, comprising: a tankdefined by an enclosing wall and a bottom, the tank being configured tocontain an electroless plating solution bath; a wafer holder configuredto rotate a portion of the wafer through the electroless platingsolution bath to be contained within the tank; and a radiant energysource disposed above the electroless plating solution bath to becontained within the tank, the radiant energy source being oriented todirect radiant energy toward the portion of the wafer upon rotation outof the electroless plating solution bath to be contained within thetank.
 12. An apparatus for depositing a material on a surface of a waferas recited in claim 11, wherein the radiant energy source is configuredto generate radiant energy having a wavelength range that is capable ofselectively heating a material present at a surface of the wafer uponwhich the radiant energy will be incident.
 13. An apparatus fordepositing a material on a surface of a wafer as recited in claim 11,wherein the radiant energy source is configured to apply a substantiallyuniform amount of the radiant energy over the surface of the wafer. 14.An apparatus for depositing a material on a surface of a wafer asrecited in claim 11, further comprising: an inlet for supplying theelectroless plating solution to the tank; and an outlet for removing theelectroless plating solution from the tank.
 15. An apparatus fordepositing a material on a surface of a wafer as recited in claim 11,further comprising: a heat exchanger capable of maintaining atemperature of the electroless plating solution to be contained withinthe tank.
 16. An apparatus for depositing a material on a surface of awafer, comprising: a tank defined by an enclosing wall and a bottom, thetank being configured to contain an electroless plating solution; awafer holder configured to dip a wafer into the electroless platingsolution to be contained within the tank, the wafer holder furtherconfigured to remove the wafer from the electroless plating solution tobe contained within the tank; and a radiant energy source disposed abovethe electroless plating solution to be contained within the tank, theradiant energy source being oriented to direct radiant energy toward thewafer upon removal of the wafer from the electroless plating solution tobe contained within the tank.
 17. An apparatus for depositing a materialon a surface of a wafer as recited in claim 16, wherein the radiantenergy source is configured to generate radiant energy having awavelength range that is capable of selectively heating a materialpresent at a surface of the wafer upon which the radiant energy will beincident.
 18. An apparatus for depositing a material on a surface of awafer as recited in claim 16, wherein the radiant energy source isconfigured to apply a substantially uniform amount of the radiant energyover the surface of the wafer.
 19. An apparatus for depositing amaterial on a surface of a wafer as recited in claim 16, furthercomprising: an inlet for supplying the electroless plating solution tothe tank; and an outlet for removing the electroless plating solutionfrom the tank.
 20. An apparatus for depositing a material on a surfaceof a wafer as recited in claim 16, further comprising: a heat exchangercapable of maintaining a temperature of the electroless plating solutionto be contained within the tank.